Gallium-Modified Zinc Oxide Thin Films Prepared by Chemical Solution Deposition

Gallium-doped ZnO (GZO) thin films on glass, which can be used as transparent electrodes, were prepared using a spin coating technique. Thermal analysis and Fourier-transform infrared spectroscopy of the dried precursor solution Zn acetate Ga nitrate dissolved in ethanol with diethanolamine confirmed decomposition organic components upon heating formation at 450 °C. The fired 600 °C oxygen air, annealed 400 Ar/H2, polycrystalline, 140 nm thick, exhibited homogeneous microstructure 50 grains smooth surface, shown by X-ray powder diffraction scanning electron atomic force microscopy. sheet resistance Rs measured 4-probe technique showed change within 80 days for all samples. GZO air values MΩ/sq decreased over time. 150 kΩ/sq obtained but increased We suggest that degradation is related to adsorption water responses depend nature defects lattice.